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Ess-neofab

A line- and system-level record of ESS and secondary-battery manufacturing processes

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  • 한국어
  • English
  • Home
  • Process
  • System
  • Interface
  • Traceability
  • News & Trends
  • About
  • Contact

카테고리

  • Interface (28)
  • News & Trends (20)
  • Process (32)
  • System (31)
  • Traceability (22)

최근 글

  • Five million ACC cells equal 2.7 to 3.6 months of nameplate outputOctober 15, 2026
  • A 160 MW battery’s six-week commissioning has two baselinesOctober 8, 2026
  • Two Cycles a Day Take 106.8 % of a Day, and the Retention Tier Shifts Cell Volume by 1.47 GWhOctober 1, 2026
  • Battwoo’s Second-Life EV Batteries — When an 80 % Acceptance Threshold Overlaps the Retirement Distribution, Incoming Screening Becomes the BottleneckSeptember 30, 2026
  • US storage set an energy record in Q2 as installed power fell 7%September 29, 2026
  • CATL Starts Trial Production in Debrecen — The Digits of the Defect-Rate Target, Not the Equipment, Set the Length of a Trial RunSeptember 29, 2026
  • A 0.45 pp read-rate gap means 10x exceptions
    Process,  Traceability

    Cell-ID Laser DPM Read Rate 99.5% vs 99.95%: How No-Reads Drive Exceptions per Shift and OEE

    July 3, 2026 /

    The read rate of a cell-ID direct part mark (DPM) is a probability defined at a single read point, but the line experiences it raised to the power of the number of read points each cell passes. Assuming 12 read points and 22,000 cells per shift, a 99.5% read rate generates 1,320 No-Read exceptions per shift, while 99.95% generates 132. Under the same assumptions, OEE falls from a baseline of 84.64% to 75.50% at 99.5% (−9.14 pp), but only to 84.13% at 99.95% (−0.51 pp). A DPM specification should therefore be defined not as "read rate X%" but by three items: verification grade immediately after marking (ISO/IEC 29158), allowable exceptions…

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    ESS-neofab Comments Off on Cell-ID Laser DPM Read Rate 99.5% vs 99.95%: How No-Reads Drive Exceptions per Shift and OEE

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